基于金属-绝缘体相变材料的高钝感集成半导体桥芯片设计
基金项目:
国家自然科学基金（No. 52101218；No. 52301241）
High Passivity Integrated Semiconductor Bridge Chip Design Based on Metal-insulator Phase Change Material
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摘要:为了提高半导体桥（SCB）火工品的安全性与可靠性，通过片上集成方式，在SCB两端并联金属-绝缘体相变材料VO2对其进行分流防护。提出蛇形设计方法来降低VO2薄膜在金属态的电阻值，使其与SCB阻值相匹配，测试了不同长宽比的VO2薄膜及相应的集成芯片在室温（25 ℃）至100 ℃范围内的电阻曲线，并对集成芯片及单独SCB在1A1W5min和1.5A2.25W5min安流试验中的传热过程进行了仿真。结果表明：蛇形设计可以有效降低VO2薄膜电阻，其阻值与蛇形长宽比（Ws/L）成反比；VO2薄膜能够对SCB起到一定的分流防护作用；集成芯片尺寸对安流试验热传导过程的平衡温度有一定影响；能够通过1.5 A安流试验的最大VO2阻值为5 Ω，这是下一步的设计目标。
Abstract:In order to improve the safety and reliability of semiconductor bridge (SCB) pyrotechnic devices, metal insulator phase change material VO2 was parallelly connected at both ends of the SCB through on-chip integration to provide shunt protection. A snake shaped design method was proposed to reduce the resistance value of VO2 thin films in the metallic state and match it with the resistance value of SCB. The resistance curves of VO2 thin films with different aspect ratios and the corresponding integrated chips were tested in the range of room temperature (25 ℃) to 100 ℃, and the heat transfer processes of the integrated chips and individual SCB in the 1A1W5min and 1.5A2.25W5min safety current tests were simulated. The results show that the snake shaped design can effectively reduce the resistance of VO2 thin films, and its resistance value is inversely proportional to the snake shaped aspect ratio (Ws/L); VO2 thin film can provide certain shunt protection for SCB; The size of the integrated chip has a certain impact on the equilibrium temperature of the thermal conduction process in the safety current test; The maximum VO2 resistance that can pass the 1.5A safety current test is 5 Ω, which is the next design goal.
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