NTC热敏电阻标称阻值对半导体桥电热防护性能的影响
基金项目:
国防基础科研计划项目（JCKY2024208C020）；叶企孙科学基金（U2341249）。
Influence of the Nominal Resistance Value of NTC Thermistors on the Thermal Protection Performance of Semiconductor Bridge
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摘要:为探究NTC热敏电阻标称阻值对1 Ω半导体桥（SCB）电热防护性能的影响，采用COMSOL Multiphysics构建电热耦合模型，对5~100 Ω范围内的7种阻值进行筛选，确定22，33，100 Ω为典型对象。结合仿真与试验（红外热像仪、电流探头），分析了不同直流激励下的桥区温度响应及电流分流特性。结果表明：热敏电阻标称阻值显著影响防护效能，可划分为高效防护区（≤10 Ω）、性能拐点区（22~33 Ω）与高阻低效区（≥50 Ω）。其中，22 Ω和33 Ω热敏电阻处于性能拐点区，在兼顾桥区性能的同时，可将SCB临界熔断电流由0.9 A分别提升至2.7 A和2.4 A，且安全电流范围内桥区温度分别控制在365 K和433 K以下，最大分流率分别达79.6%和70.8%；而100 Ω热敏电阻因响应阈值过高（0.9 A），不具备工程防护价值。研究还揭示了各阻值热敏电阻的电流响应阈值规律，为自适应防护电路设计提供了理论依据。
Abstract:To investigate the effect of the nominal resistance of Negative Temperature Coefficient (NTC) thermistors on the electrothermal protection performance of 1 Ω Semiconductor Bridges (SCBs), an electrothermal coupling model was constructed using COMSOL Multiphysics. Seven resistance values ranging from 5~100 Ω were screened, identifying 22 Ω, 33 Ω, and 100 Ω as typical subjects for analysis. Combining simulations with experiments (using infrared thermal imagers and current probes), the temperature response and current shunting characteristics of the bridge zone under different DC excitations were analyzed. The results indicate that the nominal resistance significantly affects protection efficiency, allowing the classification of resistors into three zones: a high-efficiency protection zone (≤10 Ω), a performance inflection zone (22~33 Ω), and a high-resistance low-efficiency zone (≥50 Ω). Specifically, 22 Ω and 33 Ω thermistors, located in the performance inflection zone, balance protection efficacy with bridge performance. They increase the critical fusing current of the SCB from 0.9 A to 2.7 A and 2.4 A, respectively, while maintaining the bridge zone temperature below 365 K and 433 K within the safe current range, achieving maximum shunting rates of 79.6% and 70.8%. Conversely, the 100 Ω thermistor lacks engineering protection value due to its excessive response threshold (0.9 A) and insufficient shunting in the low-current region. Furthermore, the study reveals the rule of current response thresholds for various resistance values, providing a theoretical basis for the design of adaptive protection circuits.
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