Al/Bi₂O₃含能薄膜增强半导体桥的电爆与火焰输出特性
基金项目:
山西省高等学校科技创新计划项目（2024L474）。
Electro-Explosive and Flame Output Characteristics of an Al/Bi₂O₃ Energetic Thin Film-Enhanced Semiconductor Bridge
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摘要:为提升半导体桥（SCB）在低压下的可靠性与能量输出，本文在桥区原位集成Al/Bi?O?含能薄膜，构建含能半导体桥（ESCB）。采用射频磁控溅射技术制备了总厚度2.8 μm、调制周期280 nm的多层Al/Bi?O?薄膜，SEM与XRD表征表明其结构致密、层状清晰，物相纯净。电爆测试显示：30 V低压下，ESCB临界激发时间（8.9 μs）与能量（3.73 mJ）较SCB显著降低；50 V高压下，火焰高度达12 mm，持续时间520 μs（约为SCB的1.8倍），燃烧区域覆盖桥区约3/4，且电爆总耗能提升46%。结果表明，Al/Bi?O?薄膜有效拓宽SCB工作区间，实现“低压易激发-高压强输出”的宽域能量增益，为微型起爆器件设计提供了有效技术路径。
Abstract:To enhance the reliability and energy output of semiconductor bridges (SCBs) under low-voltage excitation, an Al/Bi?O? energetic thin film was integrated onto the bridge area to fabricate an energetic semiconductor bridge (ESCB). A multilayer Al/Bi?O? film with a total thickness of 2.8 μm and a modulation period of 280 nm was deposited via radio-frequency magnetron sputtering. SEM and XRD analyses confirmed a dense, well-defined layered structure with pure phases. Electro- explosive tests revealed that, under 30 V excitation, the ESCB exhibited significantly reduced critical initiation time (8.9 μs vs 23.7 μs for SCB) and lower critical energy (3.73 mJ vs 4.98 mJ). At 50 V, the ESCB produced a flame height of 12 mm with a duration of 520 μs, approximately 1.8 times longer than that of the SCB, and the combustion zone covered about three-quarters of the bridge area, while the total explosion energy increased by 46%. These results demonstrate that the Al/Bi?O? energetic film effectively broadens the operational voltage range of SCBs, achieving broadband energy gain characterized by “easy ignition at low voltage and robust output at high voltage,” thereby offering a promising technical pathway for next-generation micro-initiators.
var swiper = new Swiper('.swiper_xq', {
navigation: {
nextEl: '.swiper-button-next',
prevEl: '.swiper-button-prev',
},
});
$(function(){
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});
jQuery(".slideTxtBox").slide({ trigger: "click" });
