Research on the Fabrication and Performance of Anti-static Integrated Semiconductor Bridges with Different Dimensions
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摘要:为优化抗静电集成半导体桥（ISCB）芯片设计中的关键参数，设计并制备了3种桥区面积（8 640、20 720、38 000 μm2）、长宽比均为1∶3.8的ISCB样品，以相同尺寸的半导体桥（SCB）为对照，采用PSpice仿真、电容发火试验（47 μF/24 V）及静电放电试验（500 pF/500 Ω/25 kV）系统评估其发火性能与静电安全性。结果表明：随桥区面积增大，ISCB的爆发时间与爆发能量显著增加，等离子体云体积扩大，点火能力增强；并联TVS二极管后，ISCB的静电安全性显著优于SCB，经3次静电冲击后桥区无可见损伤，电阻变化率随桥区面积增大而降低，C-ISCB的电阻变化率低于1%；静电冲击后，ISCB发火性能劣化程度小于SCB，其中C-ISCB爆发时间变化率为-0.47%，爆发能量变化率为-0.91%，发火性能基本保持不变。增大桥区面积可同时提升ISCB点火能力并降低静电损伤敏感性，TVS二极管的集成可有效隔离静电能量，为ISCB芯片的工程化设计提供了依据。
Abstract:To optimize key parameters in the design of anti-static integrated semiconductor bridge (ISCB) chips, three ISCB samples with bridge areas of 8?640, 20?720, and 38?000?μm2 (with a length-to-width ratio of 1∶3.8) were designed and fabricated. Conventional semiconductor bridges (SCB) with the same dimensions were used as controls. The ignition performance and electrostatic safety were evaluated using PSpice simulation, capacitor discharge ignition tests (47?μF/24?V), and electrostatic discharge (ESD) tests (500?pF/500?Ω/25?kV). The results show that as the bridge area increases, the burst time and burst energy of ISCB significantly increase, the plasma cloud expands, and the ignition capability improves. With a parallel TVS diode, the electrostatic safety of ISCB is significantly better than that of SCB. After three ESD shocks, no visible damage is observed in the ISCB bridge region, and the resistance change rate decreases with increasing bridge area, being below 1% for C-ISCB. After ESD, the degradation of ignition performance of ISCB is less than that of SCB. Specifically, the burst time change rate of C-ISCB is -0.47%, and the burst energy change rate is -0.91%, indicating essentially unchanged ignition performance. Increasing the bridge area simultaneously enhances the ignition capability and reduces the susceptibility to electrostatic damage of ISCB. The integration of TVS diode effectively isolates electrostatic energy, providing a basis for the engineering design of ISCB chips.
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