Influence of VO₂ Phase-Transition Resistance on Current-Shunting Protection of the Semiconductor Bridge
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摘要:针对现有负温度系数(NTC)热敏电阻与半导体桥(SCB)制备工艺不兼容、分立式封装体积大的问题，提出基于金属-绝缘体相变(MIT)材料VO2的集成防护新结构，重点研究相变电阻阈值对电热防护效能的影响规律。建立VO2-SCB耦合有限元模型，仿真分析不同相变电阻(0.1~10 Ω)下SCB桥区温升特性；搭建红外热成像测试平台，开展1.0~1.8 A恒流激励下的安全电流试验验证。仿真结果表明：当VO2相变电阻≤1 Ω时，1.5 A激励下SCB平衡温度低于80.85 °C，较单芯片降低约75%；当电阻超过5 Ω时，防护效能急剧下降，平衡温度跃升至191 °C以上。试验结果表明：并联VO?后，1.0，1.5，1.8 A激励下平衡温度分别为105，185，250 °C，较未防护SCB显著降低，安全电流承载能力显著提升。为高钝感集成火工品的参数设计提供了理论依据。
Abstract:To address NTC thermistor-SCB process incompatibility and bulky discrete packaging, an integrated VO? protection structure is proposed, focusing on phase-transition resistance thresholds governing electro-thermal protection. A coupled VO?-SCB finite element model simulated bridge-region temperature rise across 0.1~10 Ω resistances; an infrared thermal imaging platform validated results via 1.0~1.8 A constant-current withstand tests. Simulations indicate ≤1 Ω VO? resistance maintains SCB equilibrium below 81 ℃ at 1.5 A, a ~75% reduction versus unprotected devices. Beyond 5 Ω, efficacy collapses, temperatures exceeding 191 ℃. Experimentally, paralleled VO? yields equilibrium temperatures of 105 ℃, 185 ℃, and 250 ℃ at 1.0, 1.5, and 1.8 A, reductions of ~56%, ~41%, and ~21%, significantly enhancing safety current capacity. It provides theoretical grounding for high-insensitivity integrated initiator design.
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