基于接触孔与TiSi₂电极的高精度半导体桥换能元芯片研制
基金项目:
国防基础科研计划项目（No.JCKY2024208C020）
Development of High-Precision Semiconductor Bridge Igniters Chip Based on Contact Hole and TiSi2
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摘要:针对半导体桥换能元电阻一致性的行业瓶颈问题，本研究通过整合“接触孔限域结构”与“TiSi?低阻电极”的协同设计，在6 in（15.24 cm）特种半导体工艺线上成功实现了高精度芯片的研制。具体工艺优化措施包括：采用LPCVD技术控制多晶硅薄膜厚度非均匀性至2.1%，优化磷离子注入和扩散退火参数提升掺杂均匀性；并通过快速热退火工艺形成低阻TiSi?电极。通过四探针法、SEM形貌分析、红外热像及静电防护测试对器件进行综合评估，结果表明：晶圆级平均电阻达到（0.953 ±0.011）Ω，在14 V/33 μF电容放电下发火时间26.2 μs，在0.85 A/5 min安全电流下桥区最高温度189 ℃且功能完好，经过15 kV人体模型静电放电测试后器件功能依旧正常。该方案中，接触孔结构使桥区尺寸精度提升90%，TiSi?电极有效降低接触电阻40%~70%，工艺窗口兼容批量制造，为新一代高可靠MEMS火工品提供了可扩展技术路径。
Abstract:To address the industry bottleneck of semiconductor bridge transducer resistance consistency, this study successfully developed high-precision chips through integrated design combining "contact hole confinement structures" and "TiSi2 low-resistance electrodes" in a 6-inch(15.24 cm) specialty semiconductor production line. Key process optimizations included: Using LPCVD technology to control the thickness non-uniformity of polysilicon thin films to 2.1%; optimizing phosphorus ion implantation and diffusion annealing parameters for enhanced doping uniformity; and forming low-resistance TiSi2 electrodes through rapid thermal annealing. Comprehensive evaluations using four-terminal probes, SEM morphology analysis, infrared thermography, and electrostatic discharge testing demonstrated: a wafer-level average resistance of (0.953 ±0.011) Ω; firing time of 26.2 μs under 14 V/33 μF capacitor discharge conditions; maximum bridge area temperature of 189 ℃ at 0.85 A/5 min safe current with intact functionality; and sustained device performance after 15 kV human model electrostatic discharge testing. The contact hole structure improved bridge area dimensional accuracy by 90%, while TiSi2 electrodes reduced contact resistance by 40%~70%. The process window compatibility enables scalable manufacturing, providing an expandable technical pathway for next-generation high-reliability MEMS pyrotechnic devices.
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