Design on An Insensitive High-instantaneous Primer Based on Semiconductor Bridge Chip
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摘要:针对超高速射武器弹药对高频高安全及高一致性点火的发展需求，基于半导体桥芯片点火技术，设计了一种新型钝感高瞬发底火。通过对比研究4种半导体桥芯片及其2种封装结构，选用斯蒂芬酸铅和亚铁氢化铅/高氯酸钾作为两级复合装药，优化形成了模块化结构的半导体桥底火样机。该底火满足了与弹药接口的匹配要求，并达到1 A 1 W 5 min不发火的安全性要求。发火性能试验表明，所研制的半导体桥底火作用时间不大于200 μs，散布不大于30 μs，与传统桥丝电底火相比瞬发度和作用时间一致性显著提高，综合性能更好。
Abstract:Aiming at the development demands of high-frequency, high-safety and high-consistency ignition for ultra-high-speed weapons ammunition, a new type of insensitive high-transient primer was designed based on semiconductor bridge chip ignition technology. By comparing 4 kinds of semiconductor bridge chip and 2 kinds of packaging structure, and selecting two-stage composite charge composed of lead Stephen acid and lead azide/potassium perchlorate, the semiconductor bridge primer prototype with modular structure was optimized. The primer meets the safety requirements of non-ignition under 1 A 1 W 5 min condition and the match requirement with the ammunition interface. The firing property test results show that the action time of semiconductor bridge primer is not longer than 200 μs and the dispersion is not greater than 30 μs, compared with the traditional bridge wire electric primer, the instantaneousness and consistency of action time are significantly improved, and the comprehensive performance is better.
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