镍铬硅薄膜换能元的制备及其发火性能研究
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Study on the Preparation and Firing Property of NiCrSi Thin Film Transducers
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摘要:为了探索镍铬硅薄膜换能元的发火性能，采用MEMS工艺制备了镍铬硅薄膜换能元。利用扫描电子显微镜（SEM）和四探针法对镍铬硅薄膜进行了性能表征；依据 GJB/Z 377B-2022 感度实验中兰利法进行了镍铬硅薄膜换能元感度测试；在发火电压27 V、发火电容33 μF条件下对镍铬硅薄膜换能元进行了发火性能测试。结果表明：镍铬硅薄膜表面平整、致密性较好，且具有负电阻温度系数，其换能元平均发火电压比镍铬薄膜换能元高；镍铬硅薄膜换能元作用过程中产生等离子体，瞬发度高。
Abstract:In order to explore the firing property of NiCrSi thin film transducer, NiCrSi thin film transducer was fabricated using the MEMS process. The performances of the NiCrSi thin film were characterized by scanning eletron microscopy(SEM) and the four-probe methods; The sensitivity test of NiCrSi thin film transducer was conducted according to the Lanley method stipulated in GJB/Z 377B-2022 sensitivity test method; The firing property test of NiCrSi thin film transducer was also carried out under the condition of firing voltage of 27 V and firing capacitance of 33 μF. The results show that the NiCrSi thin film surface is flat and the density is better, the resistivity temperature coefficient is negative, the average firing voltage of NiCrSi thin film transducer is higher than that of NiCr thin film transducer; NiCrSi thin film generates plasma during the action of energy tranducers, and the prompt rate is high.
var swiper = new Swiper('.swiper_xq', {
navigation: {
nextEl: '.swiper-button-next',
prevEl: '.swiper-button-prev',
},
});
$(function(){
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});
jQuery(".slideTxtBox").slide({ trigger: "click" });
