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并联热敏电阻对半导体桥换能元直流响应的影响研究
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作者单位:

1.陕西应用物理化学研究所 瞬态化学效应与控制全国重点实验室;2.北京理工大学 机电学院

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中图分类号:

TQ560.5

基金项目:


Study on the Influence of Parallel Thermistor on the DC Response of Semiconductor Bridge Transducer
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Affiliation:

1.National Key Laboratory of Transient Chemical Effects and Control,Shaanxi Applied Physics and Chemistry Research Institute,Xi’an,710061;2.National Key Laboratory of Transient Chemical Effects and Control, Shaanxi Applied Physics and Chemistry Research Institute;3.School of Mechatronical Engineering, Beijing Institute of Technology

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    摘要:

    并联热敏电阻是提升半导体桥(SCB)临界熔断电流的重要措施。本文利用恒流电源及红外测试系统,实验研究了不同直流激励下,并联热敏电阻对半导体桥响应的影响规律,测试得到不同激励下换能元桥区温度及临界熔断电流,结果表明,并联负温度系数热敏电阻的NTC-SCB相比于未并联NTC的SCB,临界熔断电流提高了1倍以上,桥区温度下降最大可达68%,经计算,NTC热敏电阻的分流效果为34.4%-74.4%。

    Abstract:

    Parallel thermistor is an important measure to improve the critical fusing current of semiconductor bridge (SCB). In this paper, constant current power supply and infrared test system are used to experimentally study the effect of parallel thermistor on the response of semiconductor bridge under different DC excitation. The test results show that the NTC-SCB of parallel negative temperature coefficient thermistor is compared with the SCB without parallel NTC. The critical fusing current is increased by more than 1 times, and the temperature in bridge area can be reduced by up to 68%. The shunt effect of NTC thermistor is 34.4%-74.4%.

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历史
  • 收稿日期:2024-05-31
  • 最后修改日期:2024-07-01
  • 录用日期:2024-07-10
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